TW324839B
Expired / Lapsed
TW
⏱️ 0.0 years remaining
Process to grow different thickness oxide layers
Assignee: United Microelectronics Corp
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Filing: 1997-03-17
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Granted: 1998-01-11
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Expires: 2017-03-17
Abstract
Abstract A process to grow different thickness oxide layers, which includes following steps: 1. Provide a semiconductor substrate and form a field oxide and a sacrificial oxide with at least one 1st & 2nd active area above the sacrificial oxide; 2. From a photo resist layer above the sacrificial oxide and exposed 1st active area; 3. Form a N2 diffusion area by implanting N2 into the surface of semiconductor under 1st active area; 4. Remove the photo resist layer; 5. Remove the sacrificial oxide; 6. Form at least one 1st and 2nd oxide on the 1st & 2nd active area by thermal oxidation.
Inventors
- 👤 Shyh-Yih Chen
- 👤 Horng-Syh Pan
Bibliographic Details
Application Number
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Jurisdiction
TW
Data Source
google_patents
Last Synchronized
2026-11-09 02:50
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