Manufacturing method of charge storage node of integrated circuit capacitor

Abstract

Abstract A manufacturing method of charge storage node of integrated circuit capacitor comprises of the following steps: (1) on semiconductor substrate forming one dielectric, and planarizing the above dielectric; (2) depositing one amorphous silicon; (3) by lithography and etch technology etching the above dielectric and amorphous silicon to expose the above semiconductor substrate in order to form hole; (4) along the above hole wall and the above amorphous silicon forming one polysilicon hemi-spherical grain(HSG); (5) by lithography and etch technology etching the above polysilicon hemi-spherical grain and amorphous silicon; (6) removing the above native oxide of the above amorphous silicon surface; (7) to the above amorphous silicon performing annealing treatment in order to from rugged surface on the above amorphous silicon lateral surface.

Inventors

• 👤 Horng-Huei Tzeng

Bibliographic Details