Planarization process with increasing etching ratio

Abstract

Abstract A planarization process with increasing etching ratio includes: 1. depositing oxide layer with high thickness on the uneven layer on the substrate; 2. overlaying one thin spin-on-glass on the oxide layer with high thickness; 3. implementing ion implantation, and doping the upper section of oxide layer; 4. wet selective etching back; By the above ion implantation the extruding parts of oxide layer upper section becomes with high etching rate features by doping in order to conduct wet selective etching back to constitue planarization by even etching sweepingly.

Inventors

• 👤 Ming-Tzong Yang

Bibliographic Details