Process for CMOS with self-aligned twin well or triple well

Abstract

Abstract A process for CMOS with self-aligned twin well or triple well includes: 1. growing one oxide through hot oxidation on one N-type or P-typesemiconductor substrate, then implanting the doping ion of the firstconductive well; 2. overlaying one Si3N4 layer and through one mask of diffused area todefine field separating area and diffusing area, then implanting thefirst conductive field ion; 3. through one mask of the second conductive well and implanting the dopingion of the second conductive well; 4. simultaneously proceeding field oxidation and driving the doping ion ofthe first and second conductive well, then after one mask of the secondconductive well, and implanting the second conductive well with the secondconductive field ion and the doping ion of adjustable punch throughvoltage of the first conductive channel.

Inventors

• 👤 Jenn-Chyou Shyu

Bibliographic Details