Bipolar transistor

Abstract

Abstract One type of bipolar transistor with buried collector formed by implantingion with large angle has the method of manufacturing: 1. implanting collector/base on the substrate base; 2. depositing polysilicon layer; 3. implanting emitter/base contact area so as to form emitter and basecontact area separately; 4. growing thin oxide layer; 5. depositing tungsten material; 6. overlaying the mask of emitter/base; 7. etching tungsten/thin oxide layer/polysilicon/emitter; 8. overlaying the mask of collector, then etching collector; 9. depositing/etching tungsten material to form spacer; 10. implanting ion with large angle which is proportional to the size of component width with the default range of 15 - 45 degree to form the buried collector with respect to the lower parts of component area; It specified all the bipolar transistors formed by the above proceduresand with the structure of buried collector.

Inventors

• 👤 Ming-Tzong Yang
• 👤 Jong-Jeng Wu

Bibliographic Details