Pattern formation

Abstract

Abstract PURPOSE:To prevent damage of a pattern due to attachment of a resist film and a mask in contact exposure, by forming a film comprising a mixture of water soluble polymer on resist. CONSTITUTION:Resist 2 is applied on a substrate 1, and prebaking is performed at 90 deg.C. Then, 10% aqueous solution of a mixture of pullulan and polyvinylpyrrolidone is applied. Thereafter, a desired mask 4 is tightly attached on a pullulan film 3. Exposure is performed with mercury light 5. Then, the mask 4 is removed. The pullulan film 3 is removed by immersing phenomenon. At the same, a resist pattern is formed. At this time, a pattern 2a is not damaged with the mask.

Inventors

• 👤 Masataka Endo
• 👤 Masaru Sasako
• 👤 Kazufumi Ogawa

Bibliographic Details