Parallel flat board electrode type plasma etching device

Abstract

Abstract PURPOSE:To allow little polymerization to occur and to minimize charging up of electron by covering with carbon at least a surface facing flat electrodes other than a sample depositing section. CONSTITUTION:An upper electrode 1 and a lower electrode 2, both of which are made of stainless steel, are formed in a chamber 10, the lower electrode 2 being connected to an RF power supply 4. The surfaces facing the upper and lower electrodes, respectively, are covered with carbon 3 except for an area where a silicon substrate of the lower electrode 2 is to be mounted. An etching gas 5 to be supplied is made to be exhausted from an exhaust outlet 6. When etching the silicon substrate 7 using an etching gas containing halogen, excessive halogen is transformed into carbon and low molecular halogen carbide, which are exhausted efficiently from the exhaust outlet.

Inventors

• 👤 Seiji Sagawa

Bibliographic Details