Semiconductor device

Abstract

Abstract PURPOSE:To suppress a leakage current and to shorten an erasing time by so forming a first insulating film made of a composite film between a control electrode and a floating gate electrode that the end of the first film of a drain arranging direction side is retreated from both ends of a floating gate electrode toward its inside. CONSTITUTION:A floating gate electrode 43 is formed through a gate insulating film 35 on a channel region between a source region 46 and a drain region 47 on a P-type silicon substrate 31, and a control gate electrode 44 is formed through an insulating film on the electrode 43. The insulating film between the electrodes 43 and 44 is formed of a first insulating film made of a composite film including a silicon nitride film 39 and second insulating films formed at both sides of the first film, and the first film is so formed as to retreat at the ends of source, drain arranging direction side from both ends of the electrodes 43 toward its inside. Thus, a leakage current between the gate electrodes can be sufficiently suppressed, and a semiconductor device which has sufficiently good ultraviolet ray erasing characteristic can be formed.

Inventors

• 👤 Kuniyoshi Yoshikawa

Bibliographic Details