Construction of resistance pattern in monolithic ic

Abstract

Abstract PURPOSE:To eliminate an increase in a capacity due to fringing effect by forming two layers of polycrystalline Si resistors, connecting the resistors of the layers in parallel, and providing the resistor of the other layer in a gap of the resistor of one layer. CONSTITUTION:Polycrystalline Si resistors 1-3 of high layer side and polycrystalline Si resistors 4, 5 of low layer side are connected in parallel with aluminum wiring layers 16, 17 through contacts 6-11 and 12-15. In this case, the resistors 4, 5 and contacts 7, 10, 12-15 are provided in the gaps of the resistors 1-3 of the other layer. Since the resistors of the other layer exist in the gaps of the resistors for generating fringing effect, an increase in the capacity due to the fringing effect is eliminated.

Inventors

• 👤 Noboru Kusama

Bibliographic Details