Ion beam processing device

Abstract

Abstract PURPOSE:To improve the accuracy of pattern transfer by alternately arranging the N and S poles of many permanent magnets so that the poles confront the wall of the plasma generation chamber of an ion source and by preventing the growth of a redeposited layer with the magnets. CONSTITUTION:This ion beam processing device is composed essentially of a vacuum vessel 2, a substrate holder 5, a plasma generation chamber 1 and plural ion sources 20, 30. The ion source 20 is provided with a group of electrodes 21 for extracting ions 23 from generated plasma at a position between the chamber 1 and the holder 5. The N and S poles of many permanent magnets 22 are alternately arranged so that the poles confront the wall of the chamber 1.

Inventors

• 👤 Yoshimi Hakamata
• 👤 Tadashi Sato
• 👤 Kenichi Natsui
• 👤 Yasunori Ono
• 👤 Makoto Morijiri
• 👤 Masakatsu Saito
• 👤 Shigeo Aoki
• 👤 Seitaro Oishi

Bibliographic Details