Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent an SOG film from being exposed to an opening and from cracking, and to prevent metal wirings from chipped or disconnecting by making an opening in an insulating film containing the SOG film, depositing an insulating film on the whole surface, then etching it until the opening is opened again by anisotropical etching, and allowing the insulating film deposited on the sidewall of the opening to remain. CONSTITUTION:An insulating film of 3-layer structure of a first insulating film 2-an SOG film 3-a second insulating film 4 is formed on lower layer wirings 8 on and insulating film 1 formed on a lower base stepwise difference 7. Then, a through hole is patterned by photolithography, and a through-hole is opened by 2-step etchings. Thereafter, an insulating film 6 is deposited on the whole surface by chemically deposing. An anisotropic etching is conducted to allow only the insulating film on the sidewall of the film 6 to remain. Thus, the through-hole in which the SOG film is not exposed to the opening is formed in the insulating film of the 3-layer structure. Subsequently, when upper layer wirings 5 are formed, a semiconductor device which is not cracked and in which the metal wirings are not chipped or disconnected is obtained.

Inventors

• 👤 Koji Ishii

Bibliographic Details