Conductivity-modulation mosfet

Abstract

Abstract PURPOSE:To provide the title conductivity-modulation MOSFET with high resistance to latch up while decreasing the on-resistance by a method wherein p<+> and n<+> high concentration impurity regions are alternately formed below a low concentration anode region of the title MOSFET to form new current routes. CONSTITUTION:N<+> substrate regions 1 and p<+> substrate regions 2 are alternately formed in specified pitches below a p region 3. Thus, the route of electrons running from a source to an n base region 4 to be a drain through a MOS transistor is divided into two parts. One is running from the n base region 4 and an n<+> buffer region 13 to the regions 2 through the regions 3 while the other is running from the region 4 and the region 13 to the regions 1 through the region 3. Consequently, without increasing the hole injection for the conductivity modulation, the quantity of electrons running through the junction of the substrate regions 1, 2 and the regions 3 and 13 formed on the substrate regions 1, 2 can be increased while decreasing the on-resistance.

Inventors

• 👤 Koichi Murakami

Bibliographic Details