Vapor growth device

Abstract

Abstract PURPOSE:To make the supply of reaction gas uniform and to form an extremely uniformly grown film by providing a pipe opened with many holes substantially in parallel for supplying reaction gas, and mounting many crystal substrates substantially in parallel around the pipe. CONSTITUTION:A pipe 9 opened with many reaction gas supplying holes 10 are so mounted substantially at the center of a reaction tube 2 as to be rotatable by a motor 8. A susceptor 6 for holding a crystalline substrate 7 is attached between the tube 2 and the pipe 9 for supplying reaction gas. The susceptor 6 is rotated while being heated at predetermined temperature of 700-900 deg.C by a high frequency coil 4. Reaction gas is introduced from a reaction gas supply port 9a, discharged from many holes 10 of the pipe 9, and a crystal is grown on the substrate 7. Thus, the supply of the reaction gas is made uniform to form an extremely uniformly grown film.

Inventors

• 👤 Keiichi Akagawa

Bibliographic Details