Surface conductive ceramic substrate and manufacture of the same and metallizing compound for the same

Abstract

Abstract PURPOSE: To obtain a surface conductive ceramic substrate which has a metallized layer with a small electric resistance, little variation of an adhesion strength, the high adhesion strength and the excellent maintainability of a pattern form even if a baking temperature is low by a method wherein compound containing Mo, W, group IVa active metal elements and the 4th period transition metal elements (except Ti) is applied to a nitride system ceramic substrate. CONSTITUTION: Metallizing compound is composed of 26∼90wt.% high melting point metals such as Mo and W, 5∼70wt.% oxides of group IVa active metals such as Ti and Zr and 2∼20wt.% compounds of the 4th period transition metals (except Ti) such as Co, Ni and Fe. To manufacture a ceramic substrate, for instance, the metallizing compound is mixed with organic binder and, if necessary, dispersion medium to make paste with a required biscosity. After the paste is applied to the surface of a substrate made of nitride such as AlN and Si 3 N 4 by a screen printing method to form a required pattern and dried, the substrate is heated and baked in the atmosphere of inert gas such as N 2 to a temperature not higher than 1700°C. With this constitution, a metallized layer with a high adhesion strength can be formed. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Hironori Asai
• 👤 Kazuo Anzai

Bibliographic Details