Photodetector

Abstract

Abstract PURPOSE:To obtain a photodetector, whose sensitivity is remarkably improved in comparison with a detector utilizing a negative resistance element, by utilizing the resistance change in ceramic based superconductive material. CONSTITUTION:A Y-Ba-Cu-O based thin superconductive material film 2 is formed on a ceramic substrate 1. A metal electrode 3 for detecting resistance change is evaporated. A temperature adjusting device 4, which keeps temperature (a) constant when light is not projected, is provided at the lower side. Resistance (b) begins decreasing rapidly in the vicinity of about 100K. The rate of change in resistance per 1 deg.C in this region is about 300%. The rate is improved by about 20 times in comparison with the case of a negative resistance element. In a Sr-Ba-Cu-O based thin superconductive material film, the resistance is rapidly changed in the vicinity of 330K, which is higher than room temperature. The rate of change per 1 deg.C in this region becomes about 100%.

Inventors

• 👤 Noboru Nakamura
• 👤 Shinya Tsuda
• 👤 Toshiaki Yokoo
• 👤 Shoichi Nakano
• 👤 Yukinori Kuwano

Bibliographic Details