System of forming resist pattern

Abstract

Abstract PURPOSE:To conduct the dry development of a resist easily by forming a polymer superposing layer onto the surface of a high molecular crosslinking section generated by exposing the negative type photoresist. CONSTITUTION:A negative type photo-resist 2 generating a crosslinking reaction by optical irradiation is applied onto a substrate 1. The resist of a polycinnamic acid group, a polyisoprene rubber, etc., is used as such a resist. The resist is exposed to a desired pattern by ultraviolet rays after vacuum drying. A crosslinking reaction is generated in the exposure section of the resist 2 by the exposure, and high molecular crosslinks 2a are shaped. The surface of the resist 2 is exposed to plasma or reactive ions generated by employing fluorocarbon gas. A gas used is changed into O2, and reactive ion etching by O2 gas is performed. Polymer superposing layers 26 are hardly etched to O2 plasma at that time, and function as protective films, and only sections not exposed not coated with the polymer superposing layers 26 are etched.

Inventors

• 👤 Seiichi Baba

Bibliographic Details