Semiconductor device

Abstract

Abstract PURPOSE:To perform the disconnection of a desired metallic wiring without giving damage to other semiconductor device by a method wherein a poly-Si layer is locally provided under a metallic wiring layer. CONSTITUTION:In a structure, wherein a poly-Si layer 12 is locally provided under a metallic wiring layer 11 using an Al alloy wiring, a large current having a current density of 10<7>A/cm<2> or thereabouts, for example, is made to flow through the layer 11 by 1msec. Whereupon, poly-Si reacts with the layer 11 by the generation of a Joule heat and the poly-Si is diffused in the layer 11. When the poly-Si in the form of a solid solution is cooled, a crystal is deposited and an Si nodule 15 is formed in the layer 11 on the layer 12. In this state, when a current is made to further flow, an electromigration is caused and the layer 11 of a neck part 16 is fuse-cut.

Inventors

• 👤 Ichiro Fujita

Bibliographic Details