Manufacture of thin film transistor

Abstract

Abstract PURPOSE:To make a channel region thinner by a method wherein a nitride film on a channel region is removed after a LOCOS oxidation is performed, and a semiconductor layer over the channel region is subjected to etching through the nitride film used as a mask. CONSTITUTION:After a nitride film 4 is formed on a part, where a transistor is to be formed, of a semiconductor layer 2 formed on an insulating substrate 1, a so-called LOCOS oxidation is performed through the nitride film 4 used as a mask. Next, the nitride film 4 on a channel region 6 is selectively removed and the semiconductor layer 2 of the channel region 6 is made to be thinner by etching performed onto it through the nitride used as a mask. As mentioned above, etching is performed using the nitride film 4 in a LOCOS process, whereby only the semiconductor layer 2 of the channel region 6 is made thinner.

Inventors

• 👤 Hisao Hayashi
• 👤 Michio Negishi

Bibliographic Details