Manufacture of semiconductor device

Abstract

Abstract PURPOSE: To form semiconductors on an insulator by successively coating grooves with an anti-polishing layer and a layer of a chemically and mechanically polishable material having a thickness thicker than the depths of the grooves and terminating polishing when the polishing reaches the polishing- resistant layer. CONSTITUTION: After grooves 3 are formed on the main surface of a semiconductor body 1 to the depth equal to the desired value of the layer of the body 1 to be formed in a thin layer, an anti-polishing layer 4 composed of an anti- polishing material and a layer 5 of a chemically and mechanically polishable material having a thickness thicker than the depths of the grooves 3 are formed on the main surface of the body 1 including the grooves 3. Then the thickness of the body 1 is reduced by polishing the layer 5 to a flat and smooth surface and connecting the polished surface of the body 1 to the smooth flat surface of a carrier. In the processing, the polishing is terminated when the polishing reaches the layer 4. Therefore, 'semiconductors on insulator' can be obtained, because a plurality of semiconductor layers which are separated and insulated from each other are obtained with extremely high reproducibility.

Inventors

• 👤 Maria Reonteina Arek Erizabesu
• 👤 Haisuma Yan
• 👤 Maruchinusu Mihierus Seodorasu
• 👤 Uiruherumusu Adorianu Yohanesu
• 👤 Furanshisukasu Korine Yohanesu

Bibliographic Details