Element isolation method in semiconductor device

Abstract

Abstract PURPOSE: To increase the rate of oxidation in an element isolation region section, and to reduce the difference of mask size and the size of finishing by injecting an additive for accelerating oxidation into a foundation oxide thin-film in the element isolation region section before an oxide film for element isolation is formed. CONSTITUTION: The whole surface of a silicon substrate 1 is exposed to argon gas 8 through a CVD method. Consequently, argon 8 is injected into a foundation silicon oxide thin-film 2 in an element isolation region section 5. Argon 8 does not creep to the section of the silicon oxide films 2 in element region sections 4 masked with silicon nitride films 3 at that time. As a result, argon is injected only into the silicon oxide film 2 in the element isolation region section 5 not masked with the silicon nitride film 3. Argon 8 has the action of the acceleration of oxidation. Accordingly, the rate of oxidation of the element isolation region section 5 into which argon 8 is injected is increased sufficiently, and oxidation is completed before argon passes under the silicon nitride films 2. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Takeshi Koga

Bibliographic Details