Apparatus for producing semiconductor single crystal

Abstract

Abstract PURPOSE:To decrease the load to be applied to a crucible and to obtain a large-sized semiconductor single crystal by providing a supporting base of the crucible integrated with the bottom and side parts of the crucible. CONSTITUTION:The crucible 11 is put into the supporting base 12 which is made of carbon and supports the crucible 11. After a raw material for producing the single crystal is put into the crucible 11, the inside of a high-pressure vessel 14 is pressurized by gaseous Ar and the crucible 11 is heated by a heater 15 which coaxially encloses the crucible to melt the above-mentioned raw material and to directly synthesize the material, by which the raw material melt 16 is obtd. The seed crystal 17 is then lowered and after the crystal is melted and held in the melt 16, the seed crystal 17 is pulled up while the crystal is kept rotated, by which the single crystal is obtd. The supporting base 12 which houses the crucible 11 is taken in this state out of the high-pressure vessel 14 after the end of the production of the single crystal.

Inventors

• 👤 Hiromoto Fujita
• 👤 Joshi Nishio
• 👤 Kazutaka Terajima
• 👤 Katsuyoshi Fukuda

Bibliographic Details