Lapping method for gaas wafer

Abstract

Abstract PURPOSE:To enable a high accurate GaAs wafer to be manufactured in good workability by forming a target thickness control means using a dummy substrate which is made of material difficult to be machined by an alumina fine dust further matching with the target finishing thickness. CONSTITUTION:A dummy substrate 4, which is made of material (for instance, alumina system ceramics) difficult to be machined by an alumina fine dust further with a thickness matching with the target finishing thickness, is used as a target thickness control means, and machining a GaAs wafer by the alumina fine dust, the GaAs wafer is accurately controlled in finishing thickness. As the result, the GaAs wafer of high accuracy can be manufactured in good workability.

Inventors

• 👤 Hiroki Akiyama
• 👤 Makoto Ozawa
• 👤 Chikafumi Komata

Bibliographic Details