Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a contact hole, a corner of which is inclined, uniformly by vertically shaping the contact hole to a first insulating film through dry etching and vertically dry-etching the whole surface of a second insulating film through a CVD method. CONSTITUTION:A semiconductor element formed is placed on a dry etching device, the mixed gas of CHF3 and O2 is used as a reaction gas and a PSG film 2 as an insulating film is etched vertically. A photoresist film 3 as an etching mask is removed, the semiconductor element is placed on a decompression CVD device, and a high-temperature deposit oxide film (HTO film) 4 having excellent step coverage is deposited on the whole surface of the element by employing the reaction gas of SiH4 and H2O. The semiconductor element is placed on the dry etching device again, and the whole surface is etched vertically until a semiconductor substrate 1 is exposed under the same conditions of etching as the insulating film 2 is etched. A contact hole, corners of which are inclined, is shaped through the etching treatment.

Inventors

• 👤 Atsushi Koshio

Bibliographic Details