Thin film transistor

Abstract

Abstract PURPOSE:To obtain a thin film transistor in which no step is generated on an active layer and which has excellent electric characteristics by forming the active layer on a substrate and forming a gate insulating film, and source, drain electrodes thereon. CONSTITUTION:An active layer 3 is formed on an insulating substrate 1, and a gate insulating film 4, a gate electrode G, ohmic contact layers 2s, 2d, source, drain electrodes S, D are formed thereon. That is, the gate electrode G and the source, drain electrodes S, D are disposed on the same sides with respect to the layer 3. Thus, no step is formed not only on the layer 3 but on the film 4, the electrode G. As a result, the concentration of an electric field due to the step, the increase in a leakage current, a reduction in an ON current, the concentration of a stress, a reduction in a stability, etc., do not occur.

Inventors

• 👤 Tadahisa Yamaguchi
• 👤 Koichi Hiranaka

Bibliographic Details