Heterojunction fet

Abstract

Abstract PURPOSE:To prevent electron mobility from being lowered at a low temperature, by laminating a buffer layer, a channel layer, a distortion relaxation layer and a two-dimensional electron gas (2DEG) supplying layer sequentially on a semiconductor substrate and putting a gate electrode thereon to lattice matching between the channel layer and the distortion relaxation layer. CONSTITUTION:A undoped GaAs layer of 1mum as a buffer layer 11, a undoped InxGa1-xAs(x=0.15) layer 150A as a channel layer 12, a non-doped InxAl1-xAs(k=0.15) layer 20A as a distortion relaxation layer 13 and an Si doped (1.5X10<18> cm<-3>) AlxGa1-xAs(x=0.15) layer 300A as a 2DEG supplying layer 14 are sequentially superposed on a GaAs substrate 10 and a gate electrode 1b is put thereon. Electron mobility of 77K is improved because of the distortion relaxation layer.

Inventors

• 👤 Tatsuya Ohori

Bibliographic Details