Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To manufacture a MES-FET easily which is provided with a gate small in length by a method wherein a first insulating layer is subjected to etching through an opening of a resist layer, and a second insulating layer is formed on the exposed face. CONSTITUTION:An opening 5 is provided to a resist layer 3 laminated on a SiO2 layer 2 of a first insulating layer on a GaAs substrate 1, and the layer 2 is removed by etching using the layer 3 as a mask. Next, a SiO2 layer 6 of a second insulating layer is formed on the exposed face, the layer 6 is removed through a dry etching performed from the top, and then a metal layer 7 of Ti-Pt-Au is evaporated. Then, the unremoved part of the layer 6 is removed through a wet etching and the layer 7 on the layer 3 is removed through a lift-off, so that a gate electrode 7a corresponding to the size of the opening 5 is formed, and thus a MES-FET with a gate small in length can be easily manufactured.

Inventors

• 👤 Takehiro Takayama

Bibliographic Details