Wiring for semiconductor device

Abstract

Abstract PURPOSE:To improve bondability by forming wirings of two layers of copper and copper layer containing specific atomic % of oxygen in a specific thickness. CONSTITUTION:Cu 3 of 300nm thick is deposited, and a shutter is adjusted at the initial of the deposition to reduce the quantity of the Cu which arrives at a substrate. A layer 4 in which approx. 20atomic% oxygen is contained in thickness of 8nm in the Cu is formed. The thin Cu film 3 is mechanically exfoliated from the SiO2 film 2, adhered to the film 2, and the remaining Cu to the film 2 is considerably oxidized, and also oxidized from the rear side of the Cu. As a result, the Cu which is oxidized has better bondability to the film 2. This effect is recognized when the Cu/SiO boundary layer is 0.5-20nm thick and contains 10-50 atomic % oxygen.

Inventors

• 👤 Seiichi Iwata
• 👤 Hiroshi Miyazaki
• 👤 Akiko Mutou

Bibliographic Details