Electrode for plasma etching

Abstract

Abstract PURPOSE:To remarkably prolong the life of an electrode and to improve production efficiency by forming a polycrystalline Si3N4 or AlN film on a graphite base material. CONSTITUTION:A high temperature thermal CVD method which utilizes heat and a thermal plasma CVD method which utilizes plasma with the previous CVD method are preferable as a method of forming a polycrystalline Si3N4 or AlN film. A polycrystalline Si3N4 or AlN protective film is general to precipitate it on a graphite base material formed in a desired electrode shape as an electrode, but after the protective film is formed on the graphite base material, it may be formed in the electrode shape. The graphite base material preferably has high density and high strength, and a rigid bonding strength is obtained by roughing the surface. The thickness of the film is preferably 5mum or more to form a continuously dense film and 500mum or less to prevent it from self- cracking or exfoliating due to an internal stress.

Inventors

• 👤 Hiroaki Tanji
• 👤 Kenji Kadota

Bibliographic Details