Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a wiring, the resistance value of which hardly changes and which has fine size, by selectively implanting N ions into a Ti film in high concentration, respectively shaping TiN to an implanting layer and a Ti silicide to a region except the implanting layer through annealing and selectively removing only TiN through a wet etching method. CONSTITUTION:Double layer films consisting of a polysilicon film 3 and a Ti film 4 are formed through a process in which a gate for a MOS transistor element is shaped, and nitrogen ions are implanted, using a photo-resist film 5 as a shielding mask. The photo-resist 5 is gotten rid of, and TiN 8 is formed to a nitrogen ion implanting layer and a Ti silicide layer 9 to a non-implanting layer respectively through annealing in an inert gas such as Ar. The TiN layer 8 is melted and the Ti silicide layer 9 is left by dipping the whole into the mixed liquid of H2O2+NH4OH+H2O. The Ti silicide layer is stabilized through annealing at 850-900 deg.C. A polysilicon film under the residual implanting layer is removed by using a dry etching method, thus shaping a wiring pattern.

Inventors

• 👤 Masakatsu Yoshida

Bibliographic Details