Photocoupler

Abstract

Abstract PURPOSE:To facilitate manufacturing and to enable the arbitrary selection of output voltages, by laminating a transparent electrode layer, an amorphous semiconductor layer, and a rear electrode layer, with a transmissive insulation layer in between, on a surface near a junction of a semiconductor substrate, so that one or a plurality of luminous elements are formed to be connected in series. CONSTITUTION:Insulation layers of silicon nitride (Si3N4) and p-i-n type light- receiving diodes of amorphous silicon (a-Si) are serially laminated on a GaP light-emitting diode of GaP. When a current signal is applied to an input terminal 11, green light of 570nm in wavelength is radiated from the light-emitting diode and this light is made incident to an amorphous silicon light receiving diode, so that a voltage signal is generated at an output terminal 12. Five light- receiving diodes, each of which is composed of a transparent electrode 4, an a-Si layer 5, and a metallic electrode 6, can be also formed on a GaAs substrate 3 forming a light-emitting diode. When the current is applied to the input terminal 11, electromotive forces generated in the respective lightreceiving diode elements are added in series so that a high voltage can be generated.

Inventors

• 👤 Michiya Kamiyama
• 👤 Akihiko Asano

Bibliographic Details