Manufacture of semiconductor laser

Abstract

Abstract PURPOSE:To obtain a semiconductor laser crystal with excellent crystallinity by a method wherein a trench for current injection is formed in a vapor growth reaction tube and the trench is filled by crystal growth in the same vapor growth reaction tube to obtain a clean boundary of the filling crystal growth free from oxidation. CONSTITUTION:An n-type Al0.45Ga0.55As layer (first semiconductor layer) 2, an Al0.15Ga0.85As active layer 3, a p-type Al0.45Ga0.55As layer (second semiconductor layer) 4, an n-type GaAs current blocking layer (third semiconductor layer) 5 and a p-type GaAs layer (fourth semiconductor layer) 6 are successively built up on an n-type GaAs substrate 1 by an MOVPE method to form a substrate crystal 30. An SiO2 mask 7 which has a stripe-shape aperture is formed on the surface of the crystal 30 and the n-type GaAs current blocking layer 5 and a p-type GaAs layer 6 are selectively removed by vapor phase etching with arsine and hydrogen chloride in an MOVPE reaction tube to form a trench 8. After that, a p-type Al0.45Ga0.55As layer (fifth semiconductor layer) 9 and a p-type GaAs cap layer 10 are formed by an MOVPE method in the same MOVPE reaction tube and, finally, a p-type electrode 11 and an n-type electrode 12 are formed to complete a semiconductor laser.

Inventors

• 👤 Masaaki Nidou

Bibliographic Details