Dynamic-type memory

Abstract

Abstract PURPOSE:To attain effective scanning in a short time by deteriorating the storage information holding characteristics of the data at the time of a refreshing action function. CONSTITUTION:At the time of the scanning of the refreshing action function, by setting a gate node phiTS of a transistor TrQTS at higher level than the external level, making the TrQTS into an ON-condition, and connecting the resistance of R<<r, a bit line precharging potential VBP is made higher than one half of the potential of a supply voltage. In the dynamic-type memory device with the constitution as mentioned above, first, at the time of waiting, TrQ1-Q3 are made into the ON-condition by a control signal phiP, and the bit lines BL and /BL are charged by the potential VBP=1/2VCC+alpha. At the time of the action, the TrQ1-Q3 become an OFF-condition, a word line WL is selected, a TrQ4 becomes the ON-condition, the line BL and a memory cell capacitor CS are connected, the accumulated charge of the storage information moves due to he capacity dividing of a bit line capacity CB and a capacity CS, a reading margin for one datum becomes smaller, and the storage information holding characteristic of the datum can be equivalently deteriorated.

Inventors

• 👤 Masaya Okada

Bibliographic Details