Manufacture of semiconductor laser

Abstract

Abstract PURPOSE:To cleave a laser chip at a damage as a mark and to largely shorten manufacturing steps by growing a window region, then increasing the intensity of an ultraviolet light to be irradiated to damage the surface of a thin compound semiconductor film above a window region. CONSTITUTION:A first clad layer having the same conductivity type as that of a single crystalline compound semiconductor substrate, an active layer having a gap smaller than the band gap of the clad layer, and a second clad layer having a band gap larger than that of the active layer and different conductivity type from that of the first clad layer are formed on the substrate. When an N-type blocking layer 107 is formed, a light intensity is raised to irradiate an ultraviolet light to damage the surface near a cleaved face, thereby forming a surface damaged region 112. Then it is cleaved along the surface damaged region to form a resonator.

Inventors

• 👤 Tatsuya Asaga

Bibliographic Details