Contact connection structure

Abstract

Abstract PURPOSE:To reduce the resistance of a contact part by a method wherein the first and the second low resistance metal conductive films, an interlayer insulating film having an aperture reaching the second metal conductive film, and a wiring metal which maintains metallic contact with the second metal conductive film provided in said aperture, are provided on a high density impurity region. CONSTITUTION:The title contact connection structure is equipped with a high density impurity region 103 provided on one surface of a semiconductor substrate 101, the first low resistance metal conductive film 104 selectively formed on the high density impurity region 103, the second low resistance metal conductive film 105 selectively formed on the first metal conductive film 104, an interlayer insulating from 106 having an aperture reaching the second metal conductive film 105, and a wiring metal 108 which maintains metallic contact with the second metal conductive film 105 provided in the aperture. For example, the metal silicide such as titanium silicide is used for the above-mentioned first conductive film 104, and the high melting point metal such as tungsten and the like is used for the second metal conductive film 105. As a result, contact resistance can be reduced, and the lag time of circuit operation caused by wiring resistance can also be reduced.

Inventors

• 👤 Toshiyuki Shimizu

Bibliographic Details