Dry etching device

Abstract

Abstract PURPOSE:To enable a high speed etching process to be performed with a high precision without damaging semiconductor wafers, obtaining a high ion current density by applying low ion energy, by irradiating accelerated electrons to produce high density plasma. CONSTITUTION:Within a discharge region 20, discharge gas such as argon gas etc., is led to impress a cathode electrode 2, intermediate electrodes 5, 6 and an anode electrode 8 with discharge voltage for effecting a glow discharge. Within an electron beam accelerating a region 21, an electron beam accelerating electrode 8 is impressed with an accelerating voltage to lead out electrons from plasma produced in the discharge region 20 and to accelerate and lead them in an etching region 22. Within the etching region 22, an etching gas is led from an etching gas leading-in port to the region 22 to activate the etching gas by the led-in electron beams to produce high density plasma. Through these procedures, the ion contained in the plasma as ion beams hits a target to be etched away.

Inventors

• 👤 Tamio Hara
• 👤 Manabu Hamagaki
• 👤 Katsunobu Aoyanagi
• 👤 Susumu Nanba
• 👤 Takashi Yoshinaga
• 👤 Yoichi Araki

Bibliographic Details