Field effect transistor

Abstract

Abstract PURPOSE:To obtain a large mutual conductance by a method wherein a semiconductor layer has a three-layer laminated structure composed of a 1st semiconductor layer which is not doped with a donor impurity, a 2nd semiconductor layer which is doped with a donor impurity and formed on the 1st semiconductor layer and a 3rd semiconductor layer which has a smaller electron affinity than the 2nd semiconductor layer and is not doped with a donor impurity and formed on the 2nd semiconductor layer. CONSTITUTION:A nondoped GaAs layer 1, an In0.2Ga0.8As layer 2 and a nondoped GaAs layer 3 are successively formed on a GaAs semi-insulating substrate 5. An atomic layer plane 4 which is doped with atoms of silicon as a donor impurity and in which channel electrons are produced is formed in the middle of the layer 2. A source electrode 6 and a drain electrode 7 are formed on the layer 3 and a gate electrode 8 is formed on the etched part of the layer 3. If the etched depth of the layer 3 is so selected as to make the distance between the electrode 8 and the layer plane 4 400Angstrom or less, the normally-ON type operation characteristics can be obtained and a mutual conductance as high as 400m /mm can be obtained.

Inventors

• 👤 Tatsuya Yamashita
• 👤 Masahiro Shioda

Bibliographic Details