Photoelectric converting device

Abstract

Abstract PURPOSE:To provide a photoelectric converting apparatus having decreased stray capacitance and hence improved characteristics, by providing a conductor layer holding a fixed potential at intersections between discrete output electrodes and common lines while forming first and second gates of a thin-film transistor of the same material. CONSTITUTION:A conductor layer 206 capable of holding a fixed potential is provided at intersections between discrete output electrodes 202 and common lines 208, so that no stray capacitance is produced at the insulated intersections between the discrete electrodes 202 and the common lines 208. Further, interconnections capable of holding a fixed potential are provided between the discrete electrodes 202 and between the common lines 208, so that no capacitance is produced between the electrodes or between the lines. Further and second gate electrodes of a thin-film transistor 111 are formed of the same material, so that reflected or scattered light from the surface of an original are prevented from being incident to the channel section of the transistor.

Inventors

• 👤 Kazuaki Tashiro
• 👤 Satoru Itabashi
• 👤 Tetsuya Shimada

Bibliographic Details