Capacitor cell of semiconductor storage device

Abstract

Abstract PURPOSE:To increase capacity of a capacitor, by forming a charge storing region cylindrically along the inner peripheral face of a recess formed in a semiconductor substrate, with a first insulating layer interposed therebetween. CONSTITUTION:Since a charge storing region 20 is formed cylindrically all over the side walls of a trench 2 in a semiconductor substrate 1, sufficient capacity can be ensured for a capacitor. Further, since the charge storing region 20 is provided on the inner peripheral face of the trench 2 through a first insulating layer 4, no change is induced in the semiconductor substrate by alpha rays and, therefore, soft error can be prevented. Still further, since a capacitor electrode 22 is provided within the trench 2 through first and second insulating layers 4 and 21, potential of the charge storing region 20 is not changed in any way even if potential of the semiconductor substrate 1 is changed by charge to or discharge from the circuit. Thus, erroneous operation of the semiconductor device can be prevented.

Inventors

• 👤 Masahide Inuishi

Bibliographic Details