Semiconductor device

Abstract

Abstract PURPOSE:To improve the performance of a semiconductor device, by flattening an uneven part generated when crystalline semiconductor layers are formed on a substrate, providing a gate insulating film and a gate electrode on the surface, and employing the vicinity of the flattened surface as a channel. CONSTITUTION:The uneven part of a polycrystalline semiconductor layer formed when a polycrystalline semiconductor layer having 0.5mum of more of crystalline grain size is formed on a substrate is flattened to 100Angstrom or less, a gate insulating film and a gate electrode are formed on the flattened surface, and the flattened surface is employed as the channel of a field-effect transistor. Thus, the polycrystalline semiconductor which is regarded as being inferior in performance is employed to easily obtain inexpensively a field-effect transistor having excellent characteristics.

Inventors

• 👤 Hidemasa Mizutani
• 👤 Shigeki Kondo

Bibliographic Details