Semiconductor device and its manufacture

Abstract

Abstract PURPOSE:To avoid the possibility of wire breaking due to electromigration, by using a wire whose surface is covered with a high hardness metal layer containing heat-resisting metal. CONSTITUTION:On the whole surface, a first metal layer 7 composed of WN is spread by a method like sputtering. A metal layer whose main component is Al, e.g., Al-Cu layer which is low-resistive and excellent in workability is spread on the whole surface. Thereon, a second metal layer 9 of WN is spread. A third metal layer 10 is subjected to anisotropic etching by applying RIE, and only the side-wall part of a wiring part formerly formed is left. As the surface of the metal layer 8 whose main component is Al is protected by the metal layers 7, 9, 10 containing heat-resisting metal of high hardness, hillocks do not generate in a thermal process. Thereby, the possibility of wire- breaking due to electromigration is reduced.

Inventors

• 👤 Tomotoshi Inoue

Bibliographic Details