Apparatus for pulling up si single crystal and method therefor

Abstract

Abstract PURPOSE:To make it possible to obtain a crystal with a high oxygen concentration without incurring deterioration in productivity, by dividing a quartz crucible containing a molten raw material into an inner and outer chambers with a concentric quartz separation wall with a small hole, specifying the diameter of the separation wall and growing a crystal from the raw material in the inner chamber. CONSTITUTION:An outer quartz crucible 7 of a quartz crucible of double structure is placed in close contact with the inner surface of a graphite crucible 5 fixed on a crucible shaft 6 and reinforced with the crucible 5. A cylindrical quartz separation wall 8 in a concentric form with the crucible 7 is arranged and fixed in the crucible 7 to provide a small hole 9 in the separation wall 8 near the bottom of the crucible bottom. The inside diameter of the small hole is selected so as to smoothly feed a melt 11 in the outer chamber into a melt 10 in the inner chamber. Furthermore, the diameter (2r) of the separation wall 8 is selected so as to provide the relation to the diameter (2a) of a single crystal 13 to be pulled up as follows. 1.4a<=r<=2.6a. The crystal 13 is then pulled up from the melt 10 and grown while supplying the melt 11 through the small hole 9 into the inner chamber.

Inventors

• 👤 Yoji Yamashita
• 👤 Masakatsu Kojima

Bibliographic Details