Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable multiple transistor circuits to be composed economically with high precision by a method wherein a part of semiconductor films is heated up to the recrystallizing temperature or more by a local heater to form thin film transistors after recrystallizing said transistor films. CONSTITUTION:Polycrystalline or amorphous semiconductor films are isolatedly composed in multiple regions on an insulating substrate 1. Then, at least a part of the isolatedly composed semiconductor films is heated by a local heater up to the recrystallizing temperature or more to recrystallize the semiconductor films 2. Later, thin film transistors are formed on respective semiconductor films 2, 3 in the multiple regions. Consequently, the thin film transistors can be prevented from melting down in the lateral direction in case of recrystallization due to beam irradiation. Through these procedures, multiple transistor circuits in different characteristics can be formed in high throughput with high precision within the same substrate 1.

Inventors

• 👤 Genshirou Kawachi
• 👤 Kikuo Ono
• 👤 Nobutake Konishi

Bibliographic Details