Manufacturing process of cmos device

Abstract

Abstract PURPOSE: To reduce the manufacturing cost of a CMOS device, nearly down to that of an NMOS device by reducing the number of required masking steps. CONSTITUTION: To form gate regions 40, 42, a step for forming a semiconductor layer 36 uses two different masks, each allowing the gate regions 40, 42 of only one transistor of a pair of MOS transistors to be formed and also usable in the step of introducing ions to form a source and drain regions 39, 44 of each transistor. Thus it is possible to obtain a CMOS device-forming process with reduced number of masking steps and hence reduction in the device cost can be obtained.

Inventors

• 👤 Piko Paoro

Bibliographic Details