Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To prevent the increase of junction breakdown or contact resistance due to reactions with silicon, avoiding a direct contact by forming a protective film where the stepped disconnection of a barrier layer connecting silicon as a semiconductor base body and a wiring is formed. CONSTITUTION:An n-type diffusion layer is formed onto the surface layer section of a p-type Si substrate 10, the whole surface including the diffusion layer is coated with an oxide film 20, and a contact hole 30 for a wiring connected to the diffusion layer is bored in response to the central section of the diffusion layer. A barrier layer 40 consisting of Ni, etc., is shaped onto the surface of the diffusion layer exposed to the bottom of the contact hole 30, but a protective film 50 composed of a substance difficult to react with silicon is formed previously at an end section near to the wall surface of the contact hole 30 at that time. Any substance not reacted with silicon may be employed as the protective film 50 in this case. The wiring 60 made up of Al-Cu-Si, etc., is applied extending over the residual surface of the oxide film 20 from the surface of the barrier layer 40. Accordingly, a reaction between silicon and a metal for the wiring, the precipitation of silicon, etc., are prevented.

Inventors

• 👤 Yutaka Misawa
• 👤 Hideo Honma
• 👤 Naohiro Monma

Bibliographic Details