Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To manufacture a semiconductor device simultaneously satisfying the film thickness controllability and tapering of an inter-lay er insulating film by depositing a polysilicon material film as a gate uppermost layer and an intermediate layer in inter-multilayer insulating films and changing these films into silicon oxide films through heat treatment. CONSTITUTION:An LDD-structure transistor TR is formed, and an oxide film 7, a thin polysilicon material film 8 and an oxide film 9 as inter-layer insulating films are deposited in succession. A resist 13 is patterned through photoengraving, the film 8 is employ ed as a monitor for detecting an end point as important point of etching, and the oxide film is etched in an isotropic manner. The film 8 is oxidized completely, and changed into an Si oxide film 8a. The film thickness controllability and tapering of the inter-layer insulating film 9, etc., can be satisfied simultaneously through heat treatment. Polysilicon 11 is deposited, a high melting-point metallic silicide 12 is deposited, and a semiconductor substrate 1 and polysilicon 11 and the metallic silicide 12 are connected. An upper layer wiring for a transfer gate having the two layer structure of the metallic silicide 12 and poly-Si is executed through replication and machining.

Inventors

• 👤 Yoshiki Okumura

Bibliographic Details