Formation of wiring and device therefor

Abstract

Abstract PURPOSE:To contrive the improvement of a yield of wiring disconnection and wiring connection on a chip and a speedup by a method wherein a convergent ion beam-CVD and a laser CVD are respectively applied to a fine wiring place and a place where there is necessary to form a wiring it high speed. CONSTITUTION:A convergent ion beam 10 is irradiated on a desired place of an insulating lager 1 formed in a semiconductor device to open a window 51 and the surface of a wiring conductor layer 2 is exposed. Then, the beam 10 is irradiated on the exposed surface of the layer 2 under the existence of CVD gas to deposit a conductive substance 11 and a part, from which the layer 1 is removed, is tilled with the substance 11. Subsequently, the ion beam is moved to a desired distance over the layer 1 from the buried part under the existence of the CVD gas to form lead-out wires 12. Then, the beam 10 is changed-over to a laser beam to move the laser beam to a desired place over the layer 1 under the existence of the CVD gas and wirings 13 connected electrically to the wires 12 are formed. Thereby, the wirings 12 are led out of a fine site on a chip and the wirings 13 led out at high speed can be connected to one another.

Inventors

• 👤 Akira Shimase
• 👤 Fumikazu Ito
• 👤 Satoshi Haraichi
• 👤 Mikio Hongo
• 👤 Katsuro Mizukoshi

Bibliographic Details