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JPS6436769A Expired / Lapsed JP ⏱️ 0.0 years remaining

Plasma treatment device

Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1988-04-26
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Granted: —
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Expires: 2008-04-26
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Abstract

Abstract PURPOSE:To efficiently treat a substrate by introducing reactive gas into a reaction space inside a vacuum vessel wherein the intensive magnetic field generating means is provided around it, exciting the reactive gas and generating plasma having high density and high energy. CONSTITUTION:An intensive magnetic field is generated by arranging both a ring-shaped electromagnet 5 and a permanent magnet 6 parallel to a reaction chamber 1 to the outside of a vacuum vessel which has a evacuated reaction space 1 provided with a preliminary chamber 8 in the inside thereof. The substrate 2 is held on a holder 3 combined with a heater in this reaction chamber 1 and heated at the prescribed temp. The inside of the reaction chamber 1 is evacuated via an exhausting system 9 and reactive gas contg. acetylene, etc., is introduced via a gas introducing system 11. Then microwaves are introduced through a waveguide 7 from a microwave oscillator 4. Thereby the reactive gas is excited and decomposed by generating plasma having high density and high energy in the reaction chamber 1 and thereby a film having high crystallinity and excellent quality such as diamond is formed on the substrate 2 with good reproducibility.

Inventors

  • 👤 Naoki Hirose
  • 👤 Takashi Inushima
  • 👤 Toru Takayama

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 03:02
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; H01J37/32431; H01J37/32623; H01J37/3266; H01J37/32678; Y; Y10; Y10S; Y10S427/00; Y10S427/103; Y10S427/104

Claims Analysis

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References Cited (Backward Citations)

JPS60115235A Cited
JPS6147628A Cited
JPS61267324A Cited
JPS627859A Cited
JPS6343324A Cited
JPS63217620A Cited

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