Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enhance an ionization rate while the ion energy is kept low and a low pressure is maintained and to execute an etching operation accompanied with little re-adhesion due to side etching and sputtering by a method wherein, during a reactive etching process, a magnetic field is impressed on an electrode of an etching device. CONSTITUTION:An insulating film 12 such as a silicon oxide film or the like is formed on the surface of a silicon substrate 11; a first-layer aluminum wiring part 13 is formed on the film. An unhardened polyimide resin is applied by spin-coating on the whole surface; it is baked at 400 deg.C; it is hardened; an interlayer insulating film 14 is formed. A titanium film 15 is sputtered on the whole surface; the titanium film 15 is etched by a dry etching operation using CF4 gas by making use of a resist mask 16. In succession, a through hole 17 is made in the interlayer insulating film 14 by a reactive etching operation using O2+SF6 gas by making use of the titanium film 15. During this process, a magnetic field of 200 gausses is impressed on electrodes 2, 3 by using magnets 5 arranged at side peripheries of a chamber 1; the reactive etching operation is executed.

Inventors

• 👤 Seiji Sagawa

Bibliographic Details