Method of controlling electrically continuous state of mos transistor and integrated circuit obtained by applying the method

Abstract

Abstract PURPOSE: To simply control a conductive state of a MOS transistor(TR) by forming an electric connection part including a connection section employing a laser between a gate and a source region or a drain region. CONSTITUTION: A TR 11 comprises a source region 14, a drain region 15 and a gate 16, and the gate is formed on a dielectric thin layer 17 between the source region 14 and the drain region 15. In this case, an electric connection including a connection section 22 employing a laser is formed between the gate 16 and the source region 14 or the drain region 15 so as to surely control the conduction state of a MOS TR 11. That is, when a proper level is applied to electrodes 18, 19, 20 of the MOS TR 11, the TR is surely and immediately set to a positive conduction state. A negative conduction state of the TR 11 is surely determined by forming the connection section 22 employing a laser between the gate 16 and the source region 14.

Inventors

• 👤 Budouu Aran
• 👤 Bonaru Marii-Furansuwaazu
• 👤 Ruiyonnmarutan Maruteiinu

Bibliographic Details