Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To reduce the oxide film stress during oxidation process while preventing the crystalline defect in a silicon substrate from developing by a method wherein the oxide film using selective oxidation process is formed in the atmosphere containing stream and hydrogen. CONSTITUTION:After forming boron implanted layer 106 for a channel stopper and removing photoresist 104, hydrogen gas and oxygen gas led in an oxidizing furnace using a nitride film 103 as a mask are selectively oxidized in the atmosphere containing stream and hydrogen produced by burning hydrogen gas to form thick oxide films 107. Due to the quality of oxide film structure including not only Si-O coupling but also Si-N coupling, the oxide film stress can be reduced. Through these procedures, the crystalline defect in a silicon substrate 101 can be prevented from developing to minimize the leakage current in a semiconductor element.

Inventors

• 👤 Itsuki Sudo
• 👤 Yoshifumi Kawamoto
• 👤 Naoki Yamamoto
• 👤 Masayoshi Saito

Bibliographic Details